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 Preliminary Datasheet
CR8CM-12B
Thyristor
Medium Power Use Features
IT (AV) : 8 A VDRM : 600 V IGT : 15 mA Non-Insulated Type Planar Passivation Type R07DS0231EJ0100 Rev.1.00 Dec 20, 2010
Outline
RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. Cathode Anode Gate Anode
3 1 12 3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V
R07DS0231EJ0100 Rev.1.00 Dec 20, 2010
Page 1 of 6
CR8CM-12B
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Ratings 12.6 8 120 72 5 0.5 6 10 2 - 40 to +150 - 40 to +150 2.0 Unit A A A A2s W W V V A C C g Conditions
Preliminary
Commercial frequency, sine half wave Note1 180 conduction, Tc = 124C 50 Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Min. -- -- -- -- 0.2/0.1 -- -- -- Typ. -- -- -- -- -- -- 15 -- Max. 2.0/5.0 2.0/5.0 1.4 1.0 -- 15 -- 2.0 Unit mA mA V V V mA mA C/W Test conditions Tj = 125C/150C, VRRM applied Tj = 125C/150C, VDRM applied Tc = 25C, ITM = 25 A, instantaneous value Tj = 25C, VD = 6 V, IT = 1 A Tj = 125C/150C, VD = 1/2 VDRM Tj = 25C, VD = 6 V, IT = 1 A Tj = 25C, VD = 12 V Junction to caseNote1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case. 2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W.
R07DS0231EJ0100 Rev.1.00 Dec 20, 2010
Page 2 of 6
CR8CM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
103 Tc = 125C
200
Rated Surge On-State Current
Surge On-State Current (A)
1 2 3 4 5
On-State Current (A)
160
102
120
80
101
40 0 100
100 0
101
102
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
102
x 100 (%)
Gate Characteristics
Gate Trigger Current vs. Junction Temperature
103 Typical Example
101
VFGM = 6V
PGM = 5W
Gate Trigger Current (Tj = 25C)
Gate Trigger Current (Tj = tC)
Gate Voltage (V)
102
VGT = 1V
PG(AV) = 0.5W
100
IGT = 15mA
101
10-1
VGD = 0.2V
IFGM = 2A
101
102
103
100
-40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (C)
x 100 (%)
Gate Trigger Voltage vs. Junction Temperature
Transient Thermal Impedance (C/W)
103
Typical Example
Maximum Transient Thermal Impedance Characteristics (Junction to case)
102
Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage (Tj = tC)
101
102
100
101
-40
0
40
80
120
160
10-1 -3 10
10-2
10-1
100
101
Junction Temperature (C)
Time (s)
R07DS0231EJ0100 Rev.1.00 Dec 20, 2010
Page 3 of 6
CR8CM-12B
Preliminary
Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave)
160 140
Maximum Average Power Dissipation (Single-Phase Half Wave)
20
Average Power Dissipation (W)
16
180
Case Temperature (C)
360 Resistive, inductive loads 180 120 90 60 = 30 2 4 6 8 10 12 14 16
120 100 80 60 40 20 0 0
12
= 30
120 90 60
8 4 360 Resistive, inductive loads 0 2 4 6 8 10 12 14 16
0
Average On-State Current (A)
Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave)
160 Resistive loads
Maximum Average Power Dissipation (Single-Phase Full Wave)
20
Average Power Dissipation (W)
16
180
Case Temperature (C)
140 120 100 80 60 40 20 60 = 30 2 4 6
360
12
= 30
120 90 60
8 4
180 120 90
360 Resistive loads 0 0 2 4 6 8 10 12 14 16
0 0
8
10
12
14
16
Average On-State Current (A)
Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave)
160
Maximum Average Power Dissipation (Rectangular Wave)
20
Average Power Dissipation (W)
180 16 60 12 = 30 90 120
140
Case Temperature (C)
DC 270
120 100 80 60 40 20 180 270 60 DC = 30 90 120 2 4 6 8 10 12 14 16
Resistive, inductive loads 360
8
4
360 Resistive, inductive loads
0
0
2
4
6
8
10
12
14
16
0 0
Average On-State Current (A)
Average On-State Current (A)
R07DS0231EJ0100 Rev.1.00 Dec 20, 2010
Page 4 of 6
CR8CM-12B
Breakover Voltage vs. Junction Temperature
160 140 120 100 80 60 40 20 0 -40
Preliminary
Repetitive Peak Reverse Voltage (Tj = tC) x 100 (%) Repetitive Peak Reverse Voltage (Tj = 25C)
Repetitive Peak Reverse Voltage vs. Junction Temperature
160 140 120 100 80 60 40 20 0 -40
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
Typical Example
Typical Example
0
40
80
120
160
0
40
80
120
160
Junction Temperature (C)
Junction Temperature (C)
Breakover Voltage (dv/dt = vV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
160 140 120 100 80 60 40 20
Breakover Voltage (dv/dt = vV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Rate of Rise of Off-State Voltage
Typical Example Tj = 125C
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 140 120 100 80 60 40 20 01 10 102 103 104
Typical Example
Tj = 150C
0 101
102
103
104
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
Holding Current vs. Junction Temperature
Turn-Off Time vs. Junction Temperature
100
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
103
Typical Example
Turn-Off Time (s)
80
IT = 8A, -di/dt = 5A/s, VD = 300V, dv/dt = 20V/s VR = 50V
60
102
40
20
101 -40
Typical Example Distribution
0
40
80
120
160
0
0
20
40
60
80 100 120 140 160
Junction Temperature (C)
Junction Temperature (C)
R07DS0231EJ0100 Rev.1.00 Dec 20, 2010
Page 5 of 6
CR8CM-12B
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
103
Preliminary
Typical Example
102
101 -1 10
100
101
102
Gate Current Pulse Width (s)
Package Dimensions
Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code T220AB MASS[Typ.] 2.0g
Unit: mm
10.5Max
4.5 1.3
3.2
16Max
3.8Max
1.0
12.5Min
0.8
7.0
3.6
2.54
2.54
0.5
2.6
Ordering Information
Orderable Part Number CR8CM-12B#B00 CR8CM-12B-A8#B00 Note: Packing Bag Tube Quantity 100 pcs. 50 pcs. Remark Straight type A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0231EJ0100 Rev.1.00 Dec 20, 2010
4.5Max
Page 6 of 6
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. 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You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Dusseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141
http://www.renesas.com
(c) 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0


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